| 发明名称 |
Titanium silicate films with high dielectric constant |
| 摘要 |
<p>A method of making a film with a high dielectric constant uses a spin-on sol-gel process to deposit the film on a substrate, the film having a composition (SiO 2 ) x (TiO 2 ) 1-x , where 0.50 < x < 0.75. The resulting film is annealed in an oxygen-containing atmosphere at a temperature lying in the range of 500°C to 700°C.</p> |
| 申请公布号 |
EP1607375(A2) |
申请公布日期 |
2005.12.21 |
| 申请号 |
EP20050104951 |
申请日期 |
2005.06.07 |
| 申请人 |
DALSA SEMICONDUCTOR INC. |
发明人 |
MY ALI, EL KHAKANI;DILIP K., SARKAR;OUELLET, LUC;BRASSARD, DANIEL |
| 分类号 |
C03C1/00;C03C3/076;C03C4/16;C03C17/25;C23C18/12;(IPC1-7):C03C1/00 |
主分类号 |
C03C1/00 |
| 代理机构 |
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