发明名称 |
A novel capping structure for enhancing dR/R of the MTJ device |
摘要 |
<p>An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful with a moderate spin polarization free layer such as a NiFe layer with a Fe content of about 17.5 to 20 atomic %. The capping layer preferably has a Ru/Ta/Ru configuration in which the lower Ru layer is about 10 to 30 Angstroms thick and the Ta layer is about 30 Angstroms thick. As a result, a high dR/R of about 40% is achieved with low magnetostriction less than about 1.0 E-6 in an MTJ in an MRAM array. Best results are obtained with an AlOx tunnel barrier layer formed by an in-situ ROX process on an 8 to 10 Angstrom thick Al layer.</p> |
申请公布号 |
EP1607980(A2) |
申请公布日期 |
2005.12.21 |
申请号 |
EP20050392006 |
申请日期 |
2005.06.14 |
申请人 |
HEADWAY TECHNOLOGIES, INC.;APPLIED SPINTRONICS, INC. |
发明人 |
HORNG, CHENG T.;TONG, RU-YING;HONG, LIUBO;LI, MIN |
分类号 |
G11B5/39;G11C11/16;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):G11C11/16 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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