发明名称 |
MASK REPEATER AND MASK MANUFACTURING METHOD |
摘要 |
A mask repeater for transferring the pattern of a master mask onto a real mask by exposure and transferring the pattern on the real mask onto a substrate such as a semiconductor wafer. The size of the master mask is larger than that of the real mask. By using an optical system for reduction-projecting soft X-rays, a 1:1 magnification mask, which is the next generation mask, is fabricated. In a scan exposure system, the shape of a slit used for scanning is made fixed, and exposure is conducted only for the exposed region to realize oblique exposure. When the shape of the slit is a trapezoid and when the exposed region is reciprocated in the scanning direction, the number of joint exposures can be decreased. <IMAGE>
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申请公布号 |
EP1608003(A1) |
申请公布日期 |
2005.12.21 |
申请号 |
EP20040716345 |
申请日期 |
2004.03.02 |
申请人 |
OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO;SUGAWA, SHIGETOSHI;YANAGIDA, KIMIO;TAKEHISA, KIWAMU |
分类号 |
G03F7/20;(IPC1-7):H01L21/027;G03F1/08 |
主分类号 |
G03F7/20 |
代理机构 |
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