发明名称 MASK REPEATER AND MASK MANUFACTURING METHOD
摘要 A mask repeater for transferring the pattern of a master mask onto a real mask by exposure and transferring the pattern on the real mask onto a substrate such as a semiconductor wafer. The size of the master mask is larger than that of the real mask. By using an optical system for reduction-projecting soft X-rays, a 1:1 magnification mask, which is the next generation mask, is fabricated. In a scan exposure system, the shape of a slit used for scanning is made fixed, and exposure is conducted only for the exposed region to realize oblique exposure. When the shape of the slit is a trapezoid and when the exposed region is reciprocated in the scanning direction, the number of joint exposures can be decreased. <IMAGE>
申请公布号 EP1608003(A1) 申请公布日期 2005.12.21
申请号 EP20040716345 申请日期 2004.03.02
申请人 OHMI, TADAHIRO 发明人 OHMI, TADAHIRO;SUGAWA, SHIGETOSHI;YANAGIDA, KIMIO;TAKEHISA, KIWAMU
分类号 G03F7/20;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F7/20
代理机构 代理人
主权项
地址
您可能感兴趣的专利