| 摘要 |
<p>When performing connection to an external substrate by heat pressure, damage to a first functional area having low resistance against an applied pressure is alleviated, and to carried out the connection with high reliability. <??>The present invention is such that a semiconductor device has, on a substrate (10), a first functional area (1) (for example, a storage element area) and a second functional area (2) (for example, a driving circuit or signal processing circuit), wherein, if the substrate (10) is viewed in a planar fashion, a bump corresponding to an electrode for externally inputting and outputting a signal is provided in the second functional area (2) disposed inside a circumscribed rectangle of the first functional area (1). <IMAGE></p> |
