Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode

摘要

The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material ( 320 ), a hard mask material ( 330 ) and a metal material ( 340 ) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched ( 350 ) followed by a second etching ( 360 ) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched ( 370 ) to correspond to the defined bottom electrode and resistor.