发明名称 |
Method of designing wiring structure of semiconductor device and wiring structure designed accordingly |
摘要 |
A wiring structure of a semiconductor device, includes a wiring layer formed on an insulating film, a width (W) of each wire in the wiring layer and a thickness (H) of the insulating film satisfying "W/H<1" a length (L) of each wiring in the wiring layer being equal to or longer than 1 mm.
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申请公布号 |
US6978434(B1) |
申请公布日期 |
2005.12.20 |
申请号 |
US20000602253 |
申请日期 |
2000.06.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIGYO NAOYUKI;YAMAGUCHI TETSUYA |
分类号 |
H01L21/3205;G06F17/50;H01L21/82;H01L23/522;H01L29/06;H03K19/003;(IPC1-7):G06F17/50 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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