发明名称 Semiconductor device
摘要 A semiconductor device comprises, a plurality of memory cells, and an error-correction circuit, wherein write operation is performed by a late-write method, and ECC processing is executed in parallel with writing, and thereby cycle time is shortened. Moreover, it is better that when a memory cell is power supplied through a well tap, the same address is not assigned while the memory cell is power supplied through the well tap.
申请公布号 US6977858(B2) 申请公布日期 2005.12.20
申请号 US20030728965 申请日期 2003.12.08
申请人 HITACHI ULSI SYSTEMS CO., LTD. 发明人 OSADA KENICHI;KAWAHARA TAKAYUKI;YAMAGUCHI KEN;SAITO YOSHIKAZU;KITAI NAOKI
分类号 G11C11/413;G06F11/10;G11C7/22;G11C7/24;G11C29/00;G11C29/42;H01L21/8244;H01L27/10;H01L27/11;(IPC1-7):G11C7/00 主分类号 G11C11/413
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