METHOD OF PRODUCING PHOTOMASK AND PHOTOMASK BLANK

摘要

A method of producing a photomask (10) that poses a problem with a CD accuracy lowered due to a loading effect; and technique for restricting a loading effect. A method of producing a photomask (10) in which a chromium pattern (21) having a global numerical aperture difference in a plane on a translucent substrate (1) is formed on the translucent substrate (1), wherein an etching pattern (31) consisting of an inorganic material resistant to the etching of a chromium film (2) is used as the etching mask of the chromium film (2). The chromium film (2) is dry-etched under a condition selected from conditions that will cause damage to a resist pattern (41) to an extent not permitted when the resist pattern (41) is used as a mask to etch the chromium film (2).