发明名称 |
Semiconductor device and a method of manufacturing the same |
摘要 |
A semiconductor device wherein an avalanche withstand of power MISFET is improved without enlarging cell pitch. In the semiconductor device, impurity ions having a p-type conduction, e.g. B ions, are introduced from a bottom of a contact hole to form a p-type semiconductive region that is provided below a p<SUP>+</SUP>-type semiconductive region and in contact with the p<SUP>+</SUP>-type semiconductive region and an n<SUP>-</SUP>-type single crystal silicon layer and that has an impurity concentration lower than the p<SUP>+</SUP>-type semiconductive region. An n-type semiconductive region is formed in the n<SUP>-</SUP>-type single crystal silicon layer provided below the p-type semiconductive region as being in contact with the p-type semiconductive region and has an impurity concentration lower than the n<SUP>-</SUP>-type single crystal silicon layer.
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申请公布号 |
US6977416(B2) |
申请公布日期 |
2005.12.20 |
申请号 |
US20040885319 |
申请日期 |
2004.07.07 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NAKAZAWA YOSHITO;YATSUDA YUJI |
分类号 |
H01L21/822;H01L21/265;H01L21/336;H01L27/04;H01L29/08;H01L29/10;H01L29/45;H01L29/78;H01L29/94;H01L31/0328;(IPC1-7):H01L29/94 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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