SEMICONDUCTOR PROCESS COMPENSATION UTILIZING NON-UNIFORM ION IMPLANTATION METHODOLOGY,申请号KR20007001114-传众专利搜索

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发明名称	SEMICONDUCTOR PROCESS COMPENSATION UTILIZING NON-UNIFORM ION IMPLANTATION METHODOLOGY
摘要
申请公布号	KR100537811(B1)	申请公布日期	2005.12.20
申请号	KR20007001114	申请日期	2000.02.01
申请人		发明人
分类号	H01J37/304;(IPC1-7):H01J37/304	主分类号	H01J37/304
代理机构		代理人
主权项
地址

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