SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided with an SRAM cell unit provided with a pair of driving transistors, a pair of load transistors and a pair of access transistors. Each of the transistors is provided with a semiconductor layer protruding upward from a base flat plane, a gate electrode extending on opposing both side planes over the semiconductor layer from the upper part, a gate insulating film provided between the gate electrode and the semiconductor layer, and a pair of source/drain regions provided on the semiconductor layer. Each semiconductor layer is arranged by having its longitudinal direction in a first direction. In the adjacent SRAM cell units in the first direction, in each of the corresponding transistors, the semiconductor layer of one transistor is arranged on a center line in the first direction of the semiconductor layer of the other transistor.