VACUUM PLASMA PROCESSOR INCLUDING CONTROL IN RESPONSE TO DC BIAS VOLTAGE
摘要
<p>A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.</p>
申请公布号
WO2005119731(A2)
申请公布日期
2005.12.15
申请号
WO2005US18094
申请日期
2005.05.25
申请人
LAM RESEARCH CORPORATION;DHINDSA, RAJINDER;KOZAKEVICH, FELIX;TRUSSELL, DAVE
发明人
DHINDSA, RAJINDER;KOZAKEVICH, FELIX;TRUSSELL, DAVE