METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A SILICIDE LAYER

摘要

A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating layer over the semiconductor substrate, forming a conductive layer over the insulating layer, forming a first metal silicide layer over the conductive layer, , patterning the conductive layer to form a patterned first layer, wherein the patterned first layer is a part of a control electrode, patterning the first metal silicide layer to form a patterned first metal silicide layer over the control electrode so that the patterned first metal silicide layer remains over the control electrode, and forming a second metal silicide over the patterned metal silicide layer, wherein the second metal silicide layer has a thickness greater than the thickness of first metal silicide layer.