| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To simplify the structure and prevent displacement. <P>SOLUTION: To the first main surface of a semiconductor device 1 including the first main surface and a second main surface provided opposing to the first main surface, an emitter electrode is formed as the main electrode in which the main current flows. Moreover, a metal circuit 2 formed of pure aluminum connected with the emitter electrode is also formed. An insulated wiring tube 5 is also formed with a gate electrode connected as the control electrode insulated from the main electrode of the first main surface of the semiconductor device 1. The insulated wiring tube 5 is provided within the metal circuit 2. The insulated wiring tube 5 is formed of an cylindrical insulated tube 3 formed of ceramics and a signal wire 4 formed of aluminum alloy in which the internal melting point of the insulated tube 3 is set to about 600°C. The area of the joining part between the semiconductor device 1 and the metal circuit 2 is set smaller than that of the first main surface of the semiconductor device 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
