MOS SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make the action of a MOS semiconductor device with a surge protection diode stable by mounting the surge protection diode on the semiconductor substrate or in the substrate and by raising resistance to surge voltage. SOLUTION: The following things are important for this invention. An internal control circuit integrated in a self-isolation region or bonding isolation region that has been formed on the surface layer of the semiconductor substrate has a MOS semiconductor device. The distance between the channel region of the MOS semiconductor device and the channel region of the main MOS semiconductor device is set to be no less than 200μm. The amount of impurities of the self-isolation region or bonding isolation region is set to be 1×1013to 1×1014cm-2. The distance between an extraction electrode arranged in contact with the surface of the self-isolation region or bonding isolation region and the channel region of the MOS semiconductor device of the internal control circuit is no more than 100μm. COPYRIGHT: (C)2006,JPO&NCIPI