| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which can increase its accuracy and stability and realize a high performance, a high reliability and a long life, by stabilizing a process while realizing simple and convenient manufacturing steps, and also a method for manufacturing the semiconductor element. SOLUTION: In the method for manufacturing a nitride semiconductor element, an n type semiconductor layer, an active layer, and p type semiconductor layer 10 are formed on a substrate. A mask layer 11 of a predetermined shape is formed on the p type semiconductor layer 10. A ridge 10a is formed by removing part of the p type semiconductor layer 10 with use of the mask layer 11. A resist pattern 3 having an opening is formed at a position corresponding to the ridge 10a. An electrode material film 4 is formed on the entire surface of the substrate including the resist pattern 3. An electrode 5 is formed on the ridge 10a by removing part of the electrode material layer 4 by a lift-off method. An embedded film 16 is formed in the entire surface of the substrate including the electrode 5. And the embedded film 16 is removed from the surface of the electrode 5. COPYRIGHT: (C)2006,JPO&NCIPI
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