发明名称 Semiconductor device with a high thermal dissipation efficiency
摘要 Provides semiconductor devices and method for fabricating devices having a high thermal dissipation efficiency. An example device comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
申请公布号 US2005277280(A1) 申请公布日期 2005.12.15
申请号 US20050148737 申请日期 2005.06.09
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BRUNSCHWILER THOMAS J.;DESPONT MICHEL;LANTZ MARK A.;MICHEL BRUNO;VETTIGER PETER
分类号 H01L21/44;H01L21/48;H01L23/367;(IPC1-7):H01L21/44 主分类号 H01L21/44
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