发明名称 METHOD OF MEASURING CONCENTRATION OF IMPURITY ELEMENT
摘要 <p>A method of in SIMS (secondary ion mass spectrometry) using a raster variation method, shortening the standby time from setting of a sample in chamber to attainment of stabilization of secondary ion intensity. There is provided a method comprising making such an approximation that any difference between over-time changes of secondary ion intensities sequentially measured relative to two mutually different primary ion irradiation densities becomes constant, so that even when the secondary ion intensities change over time, there can be realized an accurate measuring of the concentration of impurity taking background noise into account.</p>
申请公布号 WO2005119229(A1) 申请公布日期 2005.12.15
申请号 WO2005JP10146 申请日期 2005.06.02
申请人 KOMATSU ELECTRONIC METALS CO., LTD.;NAGAI, KIYOSHI;ISHIDA, TETSUO 发明人 NAGAI, KIYOSHI;ISHIDA, TETSUO
分类号 G01N23/225;(IPC1-7):G01N23/225 主分类号 G01N23/225
代理机构 代理人
主权项
地址