发明名称 |
METHOD OF MEASURING CONCENTRATION OF IMPURITY ELEMENT |
摘要 |
<p>A method of in SIMS (secondary ion mass spectrometry) using a raster variation method, shortening the standby time from setting of a sample in chamber to attainment of stabilization of secondary ion intensity. There is provided a method comprising making such an approximation that any difference between over-time changes of secondary ion intensities sequentially measured relative to two mutually different primary ion irradiation densities becomes constant, so that even when the secondary ion intensities change over time, there can be realized an accurate measuring of the concentration of impurity taking background noise into account.</p> |
申请公布号 |
WO2005119229(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
WO2005JP10146 |
申请日期 |
2005.06.02 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD.;NAGAI, KIYOSHI;ISHIDA, TETSUO |
发明人 |
NAGAI, KIYOSHI;ISHIDA, TETSUO |
分类号 |
G01N23/225;(IPC1-7):G01N23/225 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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