发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent such an edge short circuit that a substrate is deformed by heat and pressure when thermocompression bonding is carried out, and wiring and a semiconductor device on a substrate contact to each other, in a semiconductor apparatus having a COF structure. SOLUTION: By extending an insulating layer 5 coating the substrate 3 and the wiring 4 to a lower side of the semiconductor device 1, even if the substrate deforms and the wiring is in contact with the semiconductor device at a part except a bump electrode by thermocompression bonding, since the wiring is coated with the insulating film, a occurrence possibility of the edge short circuit becomes low. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005347774(A) 申请公布日期 2005.12.15
申请号 JP20050237761 申请日期 2005.08.18
申请人 OKI ELECTRIC IND CO LTD 发明人 KOBAYASHI KANAME
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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