发明名称 |
Stress mitigation layer to reduce under bump stress concentration |
摘要 |
In some embodiments, the invention provides a stress mitigation layer that reduces stress in a layer of a microelectronic device that is below a conductive connection structure, such as a bump.
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申请公布号 |
US2005275095(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040856307 |
申请日期 |
2004.05.27 |
申请人 |
HUSSEIN MAKAREM A;HE JUN |
发明人 |
HUSSEIN MAKAREM A.;HE JUN |
分类号 |
H01L23/485;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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