发明名称 Stress mitigation layer to reduce under bump stress concentration
摘要 In some embodiments, the invention provides a stress mitigation layer that reduces stress in a layer of a microelectronic device that is below a conductive connection structure, such as a bump.
申请公布号 US2005275095(A1) 申请公布日期 2005.12.15
申请号 US20040856307 申请日期 2004.05.27
申请人 HUSSEIN MAKAREM A;HE JUN 发明人 HUSSEIN MAKAREM A.;HE JUN
分类号 H01L23/485;H01L29/76;(IPC1-7):H01L29/76 主分类号 H01L23/485
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