发明名称 |
Single metal gate material CMOS using strained si-silicon germanium heterojunction layered substrate |
摘要 |
Strained Si/strained SiGe dual-channel layer substrate provides mobility advantage and when used as a CMOS substrate enables single workfunction metal-gate electrode technology. A single metal electrode with workfunction of 4.5 eV produces near ideal CMOS performance on a dual-channel layer substrate that consists sequentially of a silicon wafer, an epitaxially grown 30% Ge relaxed SiGe layer, a compressively strained 60% Ge layer, and a tensile-strained Si cap layer.
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申请公布号 |
US2005274978(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20050138951 |
申请日期 |
2005.05.26 |
申请人 |
ANTONIADIS DIMITRI A;HOYT JUDY L;JUNG JONGWAN;YU SHAOFENG |
发明人 |
ANTONIADIS DIMITRI A.;HOYT JUDY L.;JUNG JONGWAN;YU SHAOFENG |
分类号 |
H01L21/8238;H01L29/10;H01L29/49;H01L29/78;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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