| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-resistance thin-film resistor having both of high resistivity and a fine resistance temperature coefficient for realizing a resistance element having a high resistance value, or a resistance element having a short resistance line and being suited to a high-frequency transmission system. <P>SOLUTION: The high resistance thin-film resistor consists of a thin film, obtained by adding nitrogen and indium or indium oxide to zinc oxide. A sputtering target obtained, by mixing indium oxide of 5 to 15 wt% with zinc oxide is used for manufacturing the resistor, and a thin film is deposited on a substrate, by performing sputtering in atmosphere containing nitrogen of 30% or higher to argon gas. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
