| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable surface emission semiconductor laser device having a long lifetime by reducing the effect of strain (stress) incident to formation of an Al oxide layer. SOLUTION: The semiconductor laser device has a first current constriction layer 17 formed between a p-side electrode 19 and an active layer 14 on a substrate 11 through an oxidation process, and a second current constriction layer 22 formed between the active layer 14 and the first current constriction layer 17 not through the oxidation process. Since the first current constriction layer 17 requiring the oxidation process is formed at a portion separated from the active layer 14, effect of strain (stress) incident to formation of an Al oxide layer 17B as the first current constriction layer 17 on the active layer 14 is reduced. Since the first current constriction layer 17 principally has a function for confining light and the second current constriction layer 22 principally has a function for constricting a current, the mode and element resistance can be controlled by adjusting each constriction area. COPYRIGHT: (C)2006,JPO&NCIPI
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