| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor thin film having a wide needle crystal grain for providing a semiconductor device having a stable characteristic. SOLUTION: In the manufacturing method of the semiconductor thin film, the semiconductor thin film is melted and crystallized by irradiation of a laser beam. A main laser beam and a plurality of auxiliary laser beams different in irradiance are irradiated. The main laser beam has irradiance melting the semiconductor thin film and the auxiliary laser beam has irradiance which is smaller than that of the main laser beam and melts the semiconductor thin film, and a periphery of an irradiation region of the main laser beam is irradiated with the auxiliary laser beam. In the manufacturing method, it is desirable that irradiance of the auxiliary laser beam with which a region far from the irradiation region of the main laser beam is irradiated is smaller than that of the auxiliary laser beam with which a region near the irradiation region of the main laser beam is irradiated. COPYRIGHT: (C)2006,JPO&NCIPI
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