| 摘要 |
PROBLEM TO BE SOLVED: To be able to increase a capacitance and to realize a microfabrication without any etching damage of a ferroelectric film by forming a ferroelectric capacitor of a vertical-type structure by means of a package etching of only electrode. SOLUTION: A method of manufacturing the ferroelectric capacitor according to this invention comprises the steps of: forming a platinum film, an electrode material, on the whole surface of a silicon substrate; forming facing electrodes which are a pair of capacitor electrodes obtained by collectively etching the platinum film; and embedding the ferroelectric film, a dielectric film of the capacitor, into a portion pinched between a pair of the facing electrodes. COPYRIGHT: (C)2006,JPO&NCIPI
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