发明名称 Method of barrier layer surface treatment to enable direct copper plating on barrier metal
摘要 Embodiments of a method of barrier layer surface treatment to enable direct copper plating without copper seed layer. In one embodiment, a method of plating copper on a substrate with a group VIII metal layer on top comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating copper on the pre-treated group VIII metal surface. Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath
申请公布号 US2005274621(A1) 申请公布日期 2005.12.15
申请号 US20040007857 申请日期 2004.12.09
申请人 SUN ZHI-WEN;HE RENREN 发明人 SUN ZHI-WEN;HE RENREN
分类号 C25D5/34;C25D7/04;C25D7/12;H01L21/02;H01L21/288;H01L21/768;H01L23/532;(IPC1-7):C25D5/34 主分类号 C25D5/34
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