发明名称 |
Structure from which an integrated circuit may be fabricated and a method of making same |
摘要 |
Deep silicidation of a polysilicon gate electrode following high temperature annealing of a source/drain under the gate may damage the gate oxide. This damage is prevented by forming the gate electrode as two polysilicon layers separated by a chemical oxide. During annealing the chemical oxide prevents the grains of one polysilicon layer from merging with the grains of the other polysilicon layer. Thereafter, silicidation is substantially confined to the top polysilicon layer, the low resistance of which shunts the bottom polysilicon layer through the chemical oxide.
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申请公布号 |
US2005277237(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040867078 |
申请日期 |
2004.06.14 |
申请人 |
WANG MEI-YUN;CHANG CHIH-WEI |
发明人 |
WANG MEI-YUN;CHANG CHIH-WEI |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L29/49;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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