发明名称 Photodector and photodetecting device
摘要 An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a borometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the barometer thin film and the infrared reflecting film, such that the barometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.
申请公布号 US2005274896(A1) 申请公布日期 2005.12.15
申请号 US20050143637 申请日期 2005.06.03
申请人 NEC CORPORATION 发明人 KAWANO KATSUYA;KAWAHARA AKIHIRO
分类号 G01J1/02;G01J5/20;G01T1/24;H01L27/14;(IPC1-7):G01T1/24 主分类号 G01J1/02
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