发明名称 A METHOD OF VARYING ETCH SELECTIVITIES OF A FILM
摘要 A method of patterning a crystalline film. A crystalline film having a degenerate lattice comprising first atoms in a first region and a second region is provided. Dopants are substituted for said first atoms in said first region to form a non-degenerate crystallin film in said first region. The first region and the second region are exposed to a wet etchant wherein the wet etchant etches the degenerate lattice in said second region without etching the non-degenerate lattice in the first region.
申请公布号 WO2005067020(A3) 申请公布日期 2005.12.15
申请号 WO2004US43393 申请日期 2004.12.23
申请人 INTEL CORPORATION;BRASK, JUSTIN, K. 发明人 BRASK, JUSTIN, K.
分类号 H01L21/265;H01L21/28;H01L21/306;H01L21/311;H01L21/3213;H01L21/336;H01L21/8238;H01L29/49;H01L29/51;H01L29/78 主分类号 H01L21/265
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