| 摘要 |
A method for manufacturing a semiconductor device includes forming first wirings assigned in a first region and second wirings assigned in a second region having a lower wiring density than the first region; covering the first and second wirings with a sacrificial film; reducing a thickness of the sacrificial film until surfaces of the first and second wirings expose; selectively removing the sacrificial film in the second region; depositing a first insulating film on the first and second wirings; and removing the sacrificial film in the first region, so as to form an air gap between the first wirings below the first insulating film. |
