| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit apparatus in which a plurality of transistors having different thickness of gate oxide films are integrated in one chip without deteriorating a transistor property. <P>SOLUTION: A plurality of external terminals (output terminals) of a semiconductor substrate in which a plurality of transistors having gate oxide film thickness of different two kinds or more are formed are connected to an internal circuit through an interface circuit. For example, a transistor other than a transistor having the thinnest gate oxide film is used for a transistor connected directly to the external terminal for control circuit controlling each node. Thus, a thick film gate oxide film transistor is used for a node coming into contact with an external power source and requiring high breakdown voltage, and a thin film gate oxide film transistor is used for a transistor not coming into contact with the external power source. Thereby, in the thin film gate oxide film transistor, as only voltage of a range controllable by internal voltage drop is applied, the degree of freedom of device/circuit design is widened remarkably. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
