JUNCTION FIELD EFFECT TRANSISTOR, JUNCTION HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To simplify manufacturing and stabilize characteristics such as channel length and threshold voltage, relating to a junction field effect transistor. SOLUTION: A junction type gate region 34 is formed by ion implantation region of C (carbon), and its low diffusion coefficient is utilized to stabilize characteristics such as channel length and threshold voltage. In manufacture, activation of impurities can be simultaneously performed with low resistance regions 33S and 33D of source and drain, for simplified manufacturing. COPYRIGHT: (C)2006,JPO&NCIPI