| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state image pickup element for stably manufacturing the solid-state image pickup element with a sufficient characteristic. SOLUTION: A second film 23 is formed on a semiconductor substrate 11 by covering a first film 22 in a forward taper shape. A surface is flattened and the first film 22 is exposed. The first film 22 is etched/removed. A channel stop region is formed by ion implantation by making a remaining second film 23 as a mask. A third film with a sufficient coverage characteristic is formed by covering the second film 23. A surface is flattened and the second film 23 is exposed. The second film 23 is etched/removed and a field element separation layer formed of the third film is formed. Thus, an element separation part formed of the channel stop region and the field element separation layer is produced and the solid-state image pickup element is manufactured. Materials having etching selectivity are used for the first film 22, the second film 23 and the third film. COPYRIGHT: (C)2006,JPO&NCIPI
|
