| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing solid-state imaging apparatus by which light receiving openings and transfer electrodes having excellent shape accuracy can be formed and a readout voltage can be maintained at a low level and, at the same time, transfer efficiency can be secured and, in addition, the occurrence of smear can be prevented. SOLUTION: In the method of manufacturing a solid-state imaging apparatus provided with the transfer electrodes having single-layer structures, sacrificial layer patterns 6 are formed along the charge transferring direction v and electrode material layers 7 are formed by burying the layers 7 among the sacrificial layer patterns 6 in a state where the patterns 6 are exposed. Then stripe-like dividing grooves 9 extended in the direction perpendicular to the charge transferring direction v are formed in the electrode material layer 7, so that the grooves 9 may reach the patterns 6 and the transfer electrodes 7a are formed by dividing the electrode material layer 7 with the dividing grooves 9 and sacrificial layer patterns 6. Thereafter, the light receiving openings exposing light receiving areas are formed by removing the sacrificial layer patterns 6. COPYRIGHT: (C)2006,JPO&NCIPI
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