| 摘要 |
PROBLEM TO BE SOLVED: To reduce a size while maintaining the breakdown voltage of a word line transfer transistor and a bit line switch transistor. SOLUTION: The nonvolatile semiconductor memory is provided with a memory cell transistor capable of electrically writing in and erasing information, a word line transfer transistor connected to the word line, and a bit line switch transistor connected to the bit line. The word line transfer transistor fulfills the relation, channel width W≥contact plug width×6, and it comprises contact plugs 48 and 49 connected to the source diffused layer and the drain diffused layer, respectively, and an element isolation region 28 arranged between transistors. In the case that the direction which goes to a drain from a source is made into a first direction, and the direction which intersects perpendicularly with the first direction is made into a second direction; the nonvolatile semiconductor memory maintains the relations (distance A1' between the contact plug of the second direction and the element isolation edge) > (distance A2' between the contact plug of the first direction and the element isolation edge), and (element isolation region width C1 of the second direction) < (element isolation region width C2 of the first direction). COPYRIGHT: (C)2006,JPO&NCIPI
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