| 摘要 |
PROBLEM TO BE SOLVED: To appropriately form an n-type diffusion region by using a liquid form impurity source. SOLUTION: The liquid form impurity source material is prepared consisting of an inorganic phosphorous compound, a polymer for thickening, an organic solvent, an organic phosphorous compound, and water. It is coated over a semiconductor substrate 11 to form a liquid form impurity source film 12, and the liquid form impurity source film 11 is dried. Next, the film 11 is heated at a temperature lower than the phosphorous diffusion temperature, and it subsequently is heated at a temperature higher than the phosphorous diffusion temperature to diffuse phosphorous in the semiconductor substrate 11. Thus, it becomes possible to obtain an n-type semiconductor region 16 that is superior in smoothness on the surface and uniformity of surface impurity concentration and depth. COPYRIGHT: (C)2006,JPO&NCIPI
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