METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide an AlGaInN-based single crystal having a large caliber and high quality stably with good reproducibility, and to provide various electronic devices made by utilizing the single crystal. SOLUTION: The method for producing the compound semiconductor single crystal comprises growing an AlxGayIn1-(x+y)N (0≤x≤1; 0≤y≤1; x+y≤1) single crystal of a hexagonal system, where the growing direction of the single crystal is changed at least in two steps of the thickness direction and the lateral direction. In order to change the growing direction of the crystal in two steps, change of temperatures in the sublimation method or change of gas-flow directions in the HVPE (hydride vapor phase epitaxy) method can be utilized. COPYRIGHT: (C)2006,JPO&NCIPI