| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma assisted vapor deposition system where the value of impedance at the time when plasma is discharged from a plasma gun is measured, and the flow rate of control gas is controlled, thus the state of the plasma therein is fixedly retained, and a vapor deposition film of uniform film quality is deposited, and to provide a controlling method therefor. SOLUTION: The invention comprises: a step S01 where the flow rate X of control gas before the film deposition of the first layer of a vapor deposition material and the value (a) of impedance are measured by an impedance measuring means; a step S06 where the value (b) of impedance directly before the film-deposition of the layer on the n-th (n is the integer of≥2) of the vapor deposition material is measured by the impedance measuring means, and the flow rate Y of control gas at the time of film-depositing the layer on the n-th is obtained by the formula of Y=(a/b)X; and a step S07 where, based on the obtained gas flow rate Y, a gas feed port for the control gas is controlled to control the gas flow rate, and the the vapor deposition material is film-deposited. COPYRIGHT: (C)2006,JPO&NCIPI
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