发明名称 |
DRAM device with a refresh period that varies responsive to a temperature signal having a hysteresis characteristic |
摘要 |
A semiconductor device includes a DRAM and a temperature sense circuit. The DRAM has a refresh period that varies responsive to a temperature signal. The temperature sense circuit is configured to generate the temperature signal having a first binary value in response to sensing a temperature of the DRAM of at least a first temperature level, and to generate the temperature signal having a second binary value in response to sensing a temperature of the DRAM of less than a second temperature level, wherein the second temperature value is less than the first temperature value.
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申请公布号 |
US2005276139(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20050117159 |
申请日期 |
2005.04.28 |
申请人 |
CHOI JONG-HYUN;CHO BEOB-RAE;SEO YOUNG-HUN |
发明人 |
CHOI JONG-HYUN;CHO BEOB-RAE;SEO YOUNG-HUN |
分类号 |
G11C7/04;G11C11/406;(IPC1-7):G11C7/04 |
主分类号 |
G11C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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