| 发明名称 |
Semiconductor device for electric power module, has metal layer connected to bonding wire, which is provided at front surface of substrate, so that metal layer overlaps capacitor |
| 摘要 |
<p>A capacitor is provided at the front surface of a silicon substrate (1). A metal layer connected to bonding wire (6) is provided at the front surface of the substrate, so that the metal layer overlaps the capacitor.</p> |
| 申请公布号 |
DE102004061575(A1) |
申请公布日期 |
2005.12.15 |
| 申请号 |
DE20041061575 |
申请日期 |
2004.12.21 |
| 申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
KAWAMOTO, ATSUNOBU |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/822;H01L23/485;H01L23/522;H01L23/58;H01L27/04;H01L29/739;H01L29/78;(IPC1-7):H01L23/58 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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