发明名称 |
HIGH PASS FILTER USING INSULATED GATE FIELD EFFECT TRANSISTORS |
摘要 |
<p>A high pass filter comprising a combination of capacitors C1, C2 and insulated gate field effect transistors (IGFETs), M1, M2 used as effective resistors provides a low break frequency, while providing improved linearity and a stable break frequency over a relatively wide range of input voltages. The high pass filter can be realized with a small physical size. In one particular embodiment, the small physical size allows the capacitors and the IGFET devices to be integrated together onto a common substrate.</p> |
申请公布号 |
WO2005119908(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
WO2005US07251 |
申请日期 |
2005.03.07 |
申请人 |
ALLEGRO MICROSYSTEMS, INC.;BILOTTI, ALBERTO;ROMERO, HERNAN, D. |
发明人 |
BILOTTI, ALBERTO;ROMERO, HERNAN, D. |
分类号 |
H03H11/02;H03H11/04;H03H11/12;(IPC1-7):H03H11/02 |
主分类号 |
H03H11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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