发明名称 HIGH PASS FILTER USING INSULATED GATE FIELD EFFECT TRANSISTORS
摘要 <p>A high pass filter comprising a combination of capacitors C1, C2 and insulated gate field effect transistors (IGFETs), M1, M2 used as effective resistors provides a low break frequency, while providing improved linearity and a stable break frequency over a relatively wide range of input voltages. The high pass filter can be realized with a small physical size. In one particular embodiment, the small physical size allows the capacitors and the IGFET devices to be integrated together onto a common substrate.</p>
申请公布号 WO2005119908(A1) 申请公布日期 2005.12.15
申请号 WO2005US07251 申请日期 2005.03.07
申请人 ALLEGRO MICROSYSTEMS, INC.;BILOTTI, ALBERTO;ROMERO, HERNAN, D. 发明人 BILOTTI, ALBERTO;ROMERO, HERNAN, D.
分类号 H03H11/02;H03H11/04;H03H11/12;(IPC1-7):H03H11/02 主分类号 H03H11/02
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