| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state imaging device capable of satisfactorily forming a color filter, an on-chip lens, or the like. SOLUTION: The manufacturing method includes a process for forming a first electrode layer 16 inside a semiconductor layer 3 in a pad region 33; a process for forming an opening 18 reaching the first electrode layer 16 from the rear side of the semiconductor layer 3 in the pad region 33; a process for burying a conductive layer 20 in the opening 18 in the pad region 33; a process for forming a conductive film 26 at the rear side of the semiconductor layer 3; a process for simultaneously forming at least one portion of a second wiring layer 21 and a shielding film 22 in the pad region 33 and an optical black region 32 by patterning the conductive film 26; and a process for forming the color filter 23 or the on-chip lens 24 at the rear side of the semiconductor layer 3 in an imaging region 31. COPYRIGHT: (C)2006,JPO&NCIPI
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