| 摘要 |
PROBLEM TO BE SOLVED: To stably provide a transistor having desired electrical characteristics. SOLUTION: A film formation condition determining section 130 reads, by means of a measuring section 124 which may be a scanning electronic microscope, dimensional data about a gate electrode 104 stored in a first memory 126 and table data 160 stored in a second memory 128. The results are referred to each other for determining an O<SB>2</SB>plasma treatment time without changing the energy for implanting an impurity into an SD extension region, a pocket region, etc., or the amount of the impurity to be implanted. A film formation apparatus controller 132 causes a film formation apparatus 134 to implement O<SB>2</SB>plasma treatment and regulates the time therefor, so that a silicon oxide film 106 (sacrificial film) is formed with high controllability before impurity implantation. COPYRIGHT: (C)2006,JPO&NCIPI
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