| 摘要 |
The present invention provides a method of manufacturing an ESD protection device with a gate electrode structure that reduces surge voltage applied to a gate insulating film and inhibits destruction of the gate insulating film. A method of manufacturing a semiconductor device includes steps of preparing a support substrate, forming a device region and a device-separation region on the support substrate, forming a gate insulating film in the device region, forming a first gate electrode on the gate insulating film, implanting a first impurity ion into the first gate electrode, and decreasing a first impurity ion concentration by implanting a second impurity ion with a polar character, which is opposite from that of the first impurity ion, into the first gate electrode.
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