发明名称 Plating chemistry and method of single-step electroplating of copper on a barrier metal
摘要 Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
申请公布号 US2005274622(A1) 申请公布日期 2005.12.15
申请号 US20040012965 申请日期 2004.12.15
申请人 SUN ZHI-WEN;HE RENREN;KOVARSKY NICOLAY;WANG YOU 发明人 SUN ZHI-WEN;HE RENREN;KOVARSKY NICOLAY;WANG YOU
分类号 C25D3/00;C25D3/38;C25D5/18;C25D5/34;C25D7/12;H01L21/288;H01L21/768;(IPC1-7):C25D3/00 主分类号 C25D3/00
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