发明名称 |
Plating chemistry and method of single-step electroplating of copper on a barrier metal |
摘要 |
Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
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申请公布号 |
US2005274622(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040012965 |
申请日期 |
2004.12.15 |
申请人 |
SUN ZHI-WEN;HE RENREN;KOVARSKY NICOLAY;WANG YOU |
发明人 |
SUN ZHI-WEN;HE RENREN;KOVARSKY NICOLAY;WANG YOU |
分类号 |
C25D3/00;C25D3/38;C25D5/18;C25D5/34;C25D7/12;H01L21/288;H01L21/768;(IPC1-7):C25D3/00 |
主分类号 |
C25D3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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