| 摘要 |
A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.
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