Integrated circuit memory with fast page mode verify

摘要

A method for operating an integrated circuit memory device includes applying a verify procedure in which the page of data and one or more bits from a set of replacement cells are matched with a pattern in parallel to indicate a verify result, where the page of data is "unrepaired" and may include one or more bits from defective bit lines. While matching to indicate a verify result, the one or more bits from defective bit lines in the page are masked. Flash memory and other memory devices implement the method.