发明名称 Plasma processing apparatus and mounting unit thereof
摘要 A parallel plate type plasma processing apparatus including a RF feed rod for applying a high frequency power to a susceptor and a temperature detection unit for detecting the temperature of a substrate on the susceptor is configured to reduce an effect that high frequency current flowing in the RF feed rod has on temperature detection of the temperature detection unit. A surface portion of the susceptor serves as a mounting unit including an electrostatic chuck and a heater. A shaft, which is a protection pipe extracted downward from the processing chamber, is provided under the mounting unit. A chuck electrode of the electrostatic chuck serves as an electrode for applying a high frequency voltage. Provided in the shaft are two RF feed rod for supplying a power to the electrode and an optical fiber, i.e., a temperature detection unit, having a dielectric fluorescent material is disposed in a leading end thereof. Then, the two RF feed rods and bar type conductive leads for the heater are alternately arranged at equal intervals in a circumferential direction on a circle having the optical fiber at the center thereof such that the region having therein the optical fiber is an electromagnetic wave-free region since the electric force lines respectively traveling from the RF feed rods to bar type conductive leads are offset with each other.
申请公布号 US2005274324(A1) 申请公布日期 2005.12.15
申请号 US20050094459 申请日期 2005.03.31
申请人 TOKYO ELECTRON LIMITED 发明人 TAKAHASHI SYUICHI;SASAKI YASUHARU;HIGASHIURA TSUTOMU;KUBOTA TOMOYA
分类号 C23C16/00;H01J37/32;H01L21/00;H01L21/683;(IPC1-7):C23C16/00 主分类号 C23C16/00
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