| 发明名称 |
Manufacturing method for overvoltage protection device used in communication system, involves forming emitter region on base region, and forming electrode region on emitter region |
| 摘要 |
<p>The method involves etching a first masking layer to form multiple masking regions to define a first region and a second region. A voltage-limiting region (33) and a P-type base region (32) are formed in the first region and second region respectively. An emitter region (34) is formed on the base region. An electrode region (31) is formed on the emitter region. An independent claim is also included for an overvoltage protection device.</p> |
| 申请公布号 |
DE102004024923(A1) |
申请公布日期 |
2005.12.15 |
| 申请号 |
DE20041024923 |
申请日期 |
2004.05.19 |
| 申请人 |
LITE-ON SEMICONDUCTOR CORP., HSIN-TIEN |
发明人 |
TSENG, CHING CHIU |
| 分类号 |
H01L23/58;H01L23/62;H01L29/87;(IPC1-7):H01L23/62 |
主分类号 |
H01L23/58 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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