| 摘要 |
A sense amplifying magnetic tunnel (SAMT) device is disclosed. In a particular embodiment, a field effect transistor (FET) having a drain, a source, a channel therebetween, a gate electrode and a tunneling gate oxide proximate to the channel is provided. In addition, a spin valve memory (SVM) cell is provided electrically coupled to the gate electrode. The electrical coupling between the SVM cell and the gate electrode serves to provide a control potential to the gate. In addition, the coupling provides a gain to a current passed through the SAMT device.
|
